RESEARCH PAPER
Application of pulsed discharge for deposition of organo-silicon thin films
1
Industrial Chemistry Research Institute, Rydygiera 8, 01-793 Warszawa, Poland
2
Institute of Plasma Physics and Laser Microfusion. Hery 23, 00 908 Warszawa, Poland
3
Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3. 00 664 Warszawa, Poland
Publication date: 2021-04-23
Acta Agroph. 2002, (80), 275-282
KEYWORDS
ABSTRACT
The aim of this work was the investigation of processes, which occurred during plasma treatment of the plastic (PC) surfaces. The plasma was generated from He, O2 and vapor of tetraethoxysilane (TEOS) or from He. O2 gas mixture by pulsed dielectric barrier discharge at the atmospheric pressure. Two processes were observed during He/O2/TEOS plasma treatment: thin film deposition and etching. The surface etching was observed during He/O2 plasma treatment of PC without TEOS.
METADATA IN OTHER LANGUAGES:
Polish
Zastosowanie wyładowania impulsowego do osadzania cienkich warstw krzemo-organicznych
wyładowania barierowe, trawienie plazmowe tetraetoksysilan, poliwęglany
Celem pracy było badanie procesów, które zachodzą przy plazmowej obróbce powierzchni tworzyw sztucznych. Plazmę generowano z He. O2 i par tetraetoksysilanu (TEOS) lub z mieszanin He i O2 w impulsowym wyładowaniu koronowym pod ciśnieniem atmosferycznym. Dwa procesy : osadzanie cienkich warstw i trawienie było obserwowane podczas plazmowej obróbce powierzchni plazmą He/O2/TEOS. Powierzchniowe trawienie obserwowano przy oddziaływaniu plazmą He/O2 bez TEOS.
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| eISSN: | 2300-6730 |
| ISSN: | 1234-4125 |
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