Plasma deposition of thin Ge:C:H films from tetramethyl- and tetraethylgermanium in a parallel-plate radio frequency (RF) reactor is presented. Films deposited at W/FM values below 0.6 GJ/kg are transparent, soft and insulating material s, forming polymer-like layers. Materials deposited at W/FM over 0.8 GJ/kg form dense, hard, black in colour semiconducting films. DC conductivity and optical gap measurements show a substantial tunability of these materials' physical properties (conductivity in the range of 10^-12 to 10^-2 S/m and optical gap in the range of 1.2 to 3.2 eV). Results of structural studies, comprising FTIR and ¹³C CP MAS NMR measurements, strongly indicate an organometallic character of the polymer-like films and suggest a much more inorganic structure for the semiconducting materials. Applications for the discussed materials are proposed. namely in the thermistor technology as well as in the manufacture of amorphous superlattice systems.